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Scalability of Stress Induced by Contact-Etch-Stop Layers: A Simulation Study.
- Source :
-
IEEE Transactions on Electron Devices . Jun2007, Vol. 54 Issue 6, p1446-1453. 8p. - Publication Year :
- 2007
-
Abstract
- This paper presents a study on the effectiveness of strained contact-etch-stop-layer (CESL) technologies in aggressively scaled dense structures. The focus is on nested transistors, which is a technologically very important structure that consists of a chain of gates on one active area. It will be shown that the two main channel stress components introduced by CESL, which are the vertical and parallel stresses, have a different sensitivity toward layout variations, which accordingly leads to different scaling guidelines to obtain a layout-insensitive strained CESL technology. Decreasing the CESL thickness is not enough for technology scaling; also, adapting the spacer dimensions is indispensable to scale a strained CESL technology from one technology node to the next. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 25332671
- Full Text :
- https://doi.org/10.1109/TED.2007.896367