New Chemical Method of Obtaining Thick Ga1-xMnxN Layers:  Prospective Spintronic Material.

The synthesis and characterization of Ga1-xMnxN thick layers are reported. The layers were prepared by the modified sublimation sandwich method (SSM) from GaN powder and powdered Mn sources and reacted with ammonia. Ga1-xMnxN layers having a current maximum size of 60 m thickness and 10 mm × 10 mm area were obtained. The crystals of best crystalline quality were obtained with a growth rate of 25 m/h. SIMS measurements showed the presence of layers containing up to 4 atom % Mn. Measurements involving X-ray diffraction (structure refinement), rocking curves, map of reflections, and EXAFS confirmed good structural properties without phase separation. The measurements carried out by a superconducting quantum interferometer showed that the material revealed typical paramagnetic properties. [ABSTRACT FROM AUTHOR]