Cite
Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells.
MLA
Iyer, S., et al. “Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells.” Journal of Applied Physics, vol. 101, no. 11, June 2007, p. 113508. EBSCOhost, https://doi.org/10.1063/1.2734081.
APA
Iyer, S., Wu, L., Li, J., Potoczny, S., Matney, K., & Kent, P. R. C. (2007). Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells. Journal of Applied Physics, 101(11), 113508. https://doi.org/10.1063/1.2734081
Chicago
Iyer, S., L. Wu, J. Li, S. Potoczny, K. Matney, and P. R. C. Kent. 2007. “Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells.” Journal of Applied Physics 101 (11): 113508. doi:10.1063/1.2734081.