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Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD
- Source :
-
Solid State Communications . Jul2007, Vol. 143 Issue 4/5, p236-239. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grown by MOCVD have been investigated. A new vibrational mode at 577 cm−1 obtained is assigned to the local vibrational mode (LVM) of Mn substituting the Ga site. Another mode at 667 cm−1 arises from vibrational mode of nitrogen vacancies-related defects. It is found that Mn doping increases the lattice disorder and other built-in defects such as the nitrogen vacancies. The room temperature ferromagnetism is not only dependent on the substitutional Mn content but also strongly related to these lattice disorder and negative defects in (Ga, Mn)N films. [Copyright &y& Elsevier]
- Subjects :
- *RAMAN effect
*LIGHT scattering
*SEMICONDUCTORS
*CRYSTALS
Subjects
Details
- Language :
- English
- ISSN :
- 00381098
- Volume :
- 143
- Issue :
- 4/5
- Database :
- Academic Search Index
- Journal :
- Solid State Communications
- Publication Type :
- Academic Journal
- Accession number :
- 25596371
- Full Text :
- https://doi.org/10.1016/j.ssc.2007.05.012