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Influence of polymer gate dielectrics on n-channel conduction of pentacene-based organic field-effect transistors.
- Source :
-
Journal of Applied Physics . 6/15/2007, Vol. 101 Issue 12, p124505. 4p. 5 Graphs. - Publication Year :
- 2007
-
Abstract
- This work elucidates the way polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a poly(vinyl alcohol) polymer interfacial film and another cross-linked poly(4-vinyl phenol) layer as a double-layer gate dielectric causes the pentacene-based OFETs to exhibit effective n-channel conduction of a saturated, apparent pinch-off drain-source current with the electron mobility of ∼0.012 cm2 V-1 s-1. The formation of an n channel in the pentacene layer is supported by the increased capacitance that is identified by the quasistatic capacitance-voltage measurements of devices with the metal-insulator-semiconductor configuration, biased at a positive gate voltage, in the n-type accumulation regime. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 101
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 25638687
- Full Text :
- https://doi.org/10.1063/1.2748869