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Analysis for crystal structure of Bi(Fe,Sc)O3 thin films and their electrical properties.
- Source :
-
Applied Physics Letters . 7/9/2007, Vol. 91 Issue 2, p022906. 3p. 5 Graphs. - Publication Year :
- 2007
-
Abstract
- Thin films of Bi(Fe1-xScx)O3 (BFSO) system were fabricated on (111)Pt/TiO2/SiO2/(100)Si substrates by chemical solution deposition to improve the electrical resistivity by substituting electrically unstable Fe3+ cations for stable Sc3+ cations. A single phase of perovskite was obtained in the range of x=0–0.30, in which selective replacement of Fe3+ and Sc3+ was confirmed in x=0–0.15 by using Raman measurement. The leakage current density of the BFSO films was reduced by increasing x. A well-saturated polarization–electric field hysteresis loop was obtained for BFSO films with x=0.15, showing remanent polarization of approximately 35 μC/cm2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 25857944
- Full Text :
- https://doi.org/10.1063/1.2756356