Schottky behavior at Ag/Nb-1.0wt%-doped SrTiO3 interface

Abstract: In this work, Schottky junctions of Ag/Nb-1.0wt%-doped SrTiO3 (NSTO) have been fabricated by magnetic controlled sputtering technique and annealing process after sputtering. The junction between these two materials exhibits good Schottky rectifying behavior after high-temperature annealing, and the capacitance–voltage characteristics show linear C −2–V relationships in the reverse condition. The barrier heights were determined to be 2.75eV or so by current–voltage and capacitance–voltage methods, respectively. I–V characteristics revealed that high-temperature annealing in oxygen at 700°C alters this thin surface barrier, reduces the leakage current remarkably. [Copyright &y& Elsevier]