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The effect of N-channel polysilicon thin-film transistors with body-block spacers
- Source :
-
Solid-State Electronics . Jul2007, Vol. 51 Issue 7, p1056-1061. 6p. - Publication Year :
- 2007
-
Abstract
- Abstract: This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth. [Copyright &y& Elsevier]
- Subjects :
- *THIN-film circuits
*ELECTRONIC circuits
*TRANSISTORS
*PROPERTIES of matter
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 51
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 25936564
- Full Text :
- https://doi.org/10.1016/j.sse.2007.02.043