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Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes.
- Source :
-
IEEE Transactions on Electron Devices . Aug2007, Vol. 54 Issue 8, p1860-1866. 7p. 7 Black and White Photographs, 1 Chart, 9 Graphs. - Publication Year :
- 2007
-
Abstract
- The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 µm. The so-called D1 line at 1.5 µm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 26033630
- Full Text :
- https://doi.org/10.1109/TED.2007.901072