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Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates.
- Source :
-
Journal of Applied Physics . 7/1/2007, Vol. 102 Issue 1, p013508. 5p. 4 Graphs. - Publication Year :
- 2007
-
Abstract
- Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 102
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 26355376
- Full Text :
- https://doi.org/10.1063/1.2749281