Low phase noise millimetre-wave frequency generation using embedded artificial dielectric.

This 60 GHz voltage controlled oscillator (VCO) uses an on-chip resonator with embedded artificial dielectric in place of the LC tank. The advantages are reduced metal/substrate losses and higher resonator Q with 4.7 times reduction in length and 79% reduction in area. Occupying an active area of 0.015 mm2, this 90 nm CMOS VCO consumes only 1.9 mW. It shows very low phase noise of -107 dBc/Hz at 1 MHz frequency offset and an unprecedented F.O.M. of -200 dBc/Hz, which outperforms III-V HBT and SiGe BiCMOS technologies. [ABSTRACT FROM AUTHOR]