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Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load.

Authors :
Wei, H.-J.
Meng, C.
Chang, Y.-W.
Source :
Electronics Letters (Institution of Engineering & Technology). 9/13/2007, Vol. 43 Issue 19, p1021-1022. 2p. 1 Black and White Photograph, 2 Diagrams, 1 Graph.
Publication Year :
2007

Abstract

A regenerative frequency divider with a differential transimpedance amplifier (TIA) active load using 0.35 µm SiGe HBT technology is demonstrated. The differential TIA is beneficial for higher frequency and lower sensitivity operation, and the inductive peaking enhances the bandwidth of the output buffer. From the experimental results, the operating frequency ranges from 5 to 27 GHz ( fmax/fmin=5.2) for a supply voltage of 5 V and core power consumption of 49.5 mW. The chip size is 0.86×0.822 mm. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00135194
Volume :
43
Issue :
19
Database :
Academic Search Index
Journal :
Electronics Letters (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
26555000
Full Text :
https://doi.org/10.1049/el:20071384