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Low temperature synthesis and NO x sensing properties of nanostructured Al-doped ZnO
- Source :
-
Sensors & Actuators B: Chemical . Oct2007, p382-386. 5p. - Publication Year :
- 2007
-
Abstract
- Abstract: Although ZnO is studied intensively as a sensing material, there are limited reports available on aluminum-doped ZnO (AZO) as a NO x sensor. This paper reports selective NO x sensing characteristics of Al-doped ZnO synthesized in the form of porous pellets sintered at 350°C. The salient feature of our experimental results is that our sensor can detect small concentrations of NO x at lower operating temperature. It is also observed that as compared to gases such as SO x , HCl, LPG, H2S, H2, ammonia, alcohol and acetone it selectively detects NO x due to Al-doping. The amount of Al in ZnO during synthesis is varied between 1 and 10wt%. Our sensor senses NO x concentration as low as 20ppm at 100°C with a %response of 11 and a %response of 740 at 300°C for 1wt% Al. Of all the compositions with Al-doping, 1wt% is found to give best results. Sensing experiments carried out at 350°C, however, do not show any significant improvement in the gas sensing properties. The phase contents and lattice parameters were determined by XRD and the average particle size was obtained using Scherrer formula. A probable mechanism for sensing NO x involving oxygen ion adsorption and desorption on the surface of sensor has been suggested. [Copyright &y& Elsevier]
- Subjects :
- *ZINC oxide
*SEMICONDUCTOR doping
*DOPED semiconductor superlattices
Subjects
Details
- Language :
- English
- ISSN :
- 09254005
- Database :
- Academic Search Index
- Journal :
- Sensors & Actuators B: Chemical
- Publication Type :
- Academic Journal
- Accession number :
- 26680290
- Full Text :
- https://doi.org/10.1016/j.snb.2007.03.019