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Unified Subthreshold Model for Channel-Engineered Sub-100-nm Advanced MOSFET Structures.
- Source :
-
IEEE Transactions on Electron Devices . Sep2007, Vol. 54 Issue 9, p2475-2486. 12p. 2 Black and White Photographs, 4 Graphs. - Publication Year :
- 2007
-
Abstract
- In this paper, a universal and computationally efficient subthreshold model for sub-100-nm nonuniformly doped channel MOSFET has been presented. The model incorporates drain-induced barrier lowering effect by means of the short-channel depletion width parameter d, which is evaluated using the voltage doping transformation method. The model can accurately predict the following: 1) surface potential; 2) electric field; 3) threshold voltage; and 4) subthreshold slope, for various lateral as well as transverse channel-engineered structures such as retrograde, graded channel, lightly doped drain (LDD), halo, and pocket implant technology for sub-100-nm channel length. In this paper, we have also proposed a novel device architecture incorporating the benefits of asymmetric halo and LDD doping. The analytical results have been verified by ATLAS 2-D device simulation software. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 26695641
- Full Text :
- https://doi.org/10.1109/TED.2007.902200