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Analysis of Hot Carrier Transport in AlGaAs/InGaAs Pseudomorphic HEMT's by Means of...
- Source :
-
IEEE Transactions on Electron Devices . Jan2000, Vol. 47 Issue 1, p2. 9p. 1 Color Photograph, 3 Black and White Photographs, 12 Graphs. - Publication Year :
- 2000
-
Abstract
- Analyzes carrier transport phenomena occuring in pseudomorphic AlGaAs/InGaAs high electronic mobility transistor (HEMT). Significance of hot-electron phenomena in the design power of AlGaAs/InGaAs pseudomorphic HEMT; Development of techniques to improve hot-electron characteristics and breakdown voltage of HEMT; Sample description and experimental apparatus; Electrical measurements.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 2715089
- Full Text :
- https://doi.org/10.1109/16.817561