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Nanoionics-based resistive switching memories.
- Source :
-
Nature Materials . Nov2007, Vol. 6 Issue 11, p833-840. 8p. 4 Diagrams. - Publication Year :
- 2007
-
Abstract
- Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14761122
- Volume :
- 6
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Nature Materials
- Publication Type :
- Academic Journal
- Accession number :
- 27297140
- Full Text :
- https://doi.org/10.1038/nmat2023