Cite
High responsivity of GaN p-i-n photodiode by using low-temperature interlayer.
MLA
Lin, J. C., et al. “High Responsivity of GaN P-i-n Photodiode by Using Low-Temperature Interlayer.” Applied Physics Letters, vol. 91, no. 17, Oct. 2007, p. 173502. EBSCOhost, https://doi.org/10.1063/1.2800813.
APA
Lin, J. C., Su, Y. K., Chang, S. J., Lan, W. H., Huang, K. C., Chen, W. R., Huang, C. Y., Lai, W. C., Lin, W. J., & Cheng, Y. C. (2007). High responsivity of GaN p-i-n photodiode by using low-temperature interlayer. Applied Physics Letters, 91(17), 173502. https://doi.org/10.1063/1.2800813
Chicago
Lin, J. C., Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C. Lai, W. J. Lin, and Y. C. Cheng. 2007. “High Responsivity of GaN P-i-n Photodiode by Using Low-Temperature Interlayer.” Applied Physics Letters 91 (17): 173502. doi:10.1063/1.2800813.