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Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions
- Source :
-
Solid-State Electronics . Nov2007, Vol. 51 Issue 11/12, p1444-1449. 6p. - Publication Year :
- 2007
-
Abstract
- Abstract: This work investigates for the first time, the physics of carrier transport in a sub-90nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering r sat and source injection velocity υ inj were observed, accounting for the large drive current I Dsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in r sat is related to a shorter critical length ℓ0 for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υ inj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed. [Copyright &y& Elsevier]
- Subjects :
- *PHYSICS
*SILICON
*ELECTRIC conductivity
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 51
- Issue :
- 11/12
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 27703085
- Full Text :
- https://doi.org/10.1016/j.sse.2007.09.013