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Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories
- Source :
-
Solid-State Electronics . Nov2007, Vol. 51 Issue 11/12, p1540-1546. 7p. - Publication Year :
- 2007
-
Abstract
- Abstract: In this paper, we evaluate the potentialities of hafnium-aluminates (HfAlO) materials as possible candidates for the interpoly dielectrics of future Flash memory devices. HfAlO layers of different thicknesses and compositions are integrated in single-layers and in Oxide/HfAlO/Oxide (OHO) triple-layer stacks, and analyzed in terms of coupling and insulating capabilities. We demonstrate that increasing the Hf content allows reducing the leakage current at high voltages but it results in a stronger leakage current at low voltages. We also show that once normalized in electric fields, the leakage current characteristics are independent of the high-k thickness. The electron conduction modes in these materials, at different temperatures, are also investigated. The activation energy increases with the Hf concentration in the HfAlO alloy, resulting in a higher leakage current at elevated temperatures. Finally, it is demonstrated that the conduction in triple-layer stacks is limited by a Poole–Frenkel conduction in the high-k layers, while the trap contribution in the case of single-layers becomes dominant when the HfAlO layer is thicker than 8nm. [Copyright &y& Elsevier]
- Subjects :
- *FLASH memory
*DIELECTRICS
*HIGH voltages
*ELECTRIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 51
- Issue :
- 11/12
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 27703099
- Full Text :
- https://doi.org/10.1016/j.sse.2007.09.020