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Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide.
- Source :
-
Applied Physics Letters . 8/20/2007, Vol. 91 Issue 8, p082904. 3p. 3 Graphs. - Publication Year :
- 2007
-
Abstract
- In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the authors have deposited high-k dielectric layers on GeO2, grown at 350–450 °C in O2. ZrO2, HfO2, and Al2O3 were deposited by atomic layer deposition (ALD). GeO2 and ZrO2 or HfO2 intermix during ALD, together with partial reduction of Ge4+. Almost no intermixing or reduction occurs during Al2O3 ALD. Capacitors show well-behaved capacitance-voltage characteristics on both n- and p-Ge, indicating efficient passivation of the Ge/GeOx interface. The density of interface states is typically in the low to mid-1011 cm-2 eV-1 range, approaching state-of-the-art Si/HfO2/matal gate devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27758695
- Full Text :
- https://doi.org/10.1063/1.2773759