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Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal.
- Source :
-
Applied Physics Letters . 8/20/2007, Vol. 91 Issue 8, p082103. 3p. 1 Black and White Photograph, 3 Graphs. - Publication Year :
- 2007
-
Abstract
- The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27758749
- Full Text :
- https://doi.org/10.1063/1.2760144