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A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region.
- Source :
-
IEEE Transactions on Electron Devices . Dec2007, Vol. 54 Issue 12, p3186-3194. 9p. 2 Black and White Photographs, 9 Graphs. - Publication Year :
- 2007
-
Abstract
- This paper presents a circuit-compatible compact model for the intrinsic channel region of the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This model is valid for CNFET with a wide range of chiralities and diameters and for CNFET with either metallic or semiconducting carbon-nanotube (CNT) conducting channel. The modeled nonidealities include the quantum confinement effects on both circumferential and axial directions, the acoustical/optical phonon scattering in the channel region, and the screening effect by the parallel CNTs for CNFET with multiple CNTs. In order to be compatible with both large- (digital) and small-signal (analog) applications, a complete transcapacitance network is implemented to deliver the real-time dynamic response. This model is implemented with an HSPICE. Using this model, we project a 13 times CV/I improvement of the intrinsic CNFET with (19, 0) CNT over the bulk n-type MOSFET at the 32-nm node. The model described in this paper serves as a starting point toward the complete CNFET- device model incorporating the additional device/circuit-level nonidealities and multiple CNTs reported in the paper of Deng and Wong. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 27759725
- Full Text :
- https://doi.org/10.1109/TED.2007.909030