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Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals.
- Source :
-
Nanotechnology . Jan2008, Vol. 19 Issue 1, p15204-15204. 1p. - Publication Year :
- 2008
-
Abstract
- Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of [?]103 and a field-effect mobility of 4.1 cm2 V[?]1 s[?]1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of [?]103 and a field-effect mobility of 4.0 cm2 V[?]1 s[?]1. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*IRON metallurgy
*ISOSTATIC pressing
*POWDER metallurgy
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 19
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 27794488
- Full Text :
- https://doi.org/10.1088/0957-4484/19/01/015204