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Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles.

Authors :
Chen, Wei-Ren
Chang, Ting-Chang
Yeh, Jui-Lung
Sze, Simon M.
Chang, Chun-Yen
Chen, Uei-Shin
Source :
Applied Physics Letters. 11/26/2007, Vol. 91 Issue 22, p222105. 3p. 1 Black and White Photograph, 3 Graphs.
Publication Year :
2007

Abstract

This study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
91
Issue :
22
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
27798649
Full Text :
https://doi.org/10.1063/1.2816125