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Structures and properties of La- and Sm-doped BaTiO3 sputtered films: Post-annealing and dopant effects.
- Source :
-
Journal of Applied Physics . Jan2008, Vol. 103 Issue 1, p014106. 5p. 2 Charts, 4 Graphs. - Publication Year :
- 2008
-
Abstract
- 200-nm-thick La- and Sm-doped BaTiO3 thin films with A/B ratio of unity fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si substrate have been characterized. The effects of post-annealing and the amount of dopant on structure and electrical properties were studied. X-ray diffraction studies reveal that the films annealed at 750 °C show tetragonal BaTiO3 crystal structure without any detectable second phase formation. X-ray photoelectron spectroscopy results confirm that La substitutes the A site and Sm is in the B site in lightly doped films. La2O3 or Sm2O3 is present in the BaTiO3 structure when the dopant content is more than 1.4 at. % La or 1.0% Sm. The permittivity increases with increasing annealing temperature up to 750 °C due to the coarse grains and better crystallinity. The leakage current property is found to vary with the type of dopant. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 28528136
- Full Text :
- https://doi.org/10.1063/1.2827501