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HIGH-QUALITY INTRINSIC ZnO FILM FOR THE APPLICATION OF SOLAR CELL GROWN BY ICP-ASSISTED REACTIVE DC MAGNETRON SPUTTERING AT LOW TEMPERATURE.
- Source :
-
Surface Review & Letters . Dec2007, Vol. 14 Issue 6, p1083-1087. 5p. 2 Diagrams, 3 Graphs. - Publication Year :
- 2007
-
Abstract
- Intrinsic zinc oxide (i-ZnO) film was prepared for CuInSe2 (CIS) solar cell application [L. Stolt and J. Hedstrom, Appl. Phys. Lett.62 (1993) 8; D. Rudmann, Ph.D. Thesis, University of Basel, Basel, (2004)] on glass substrate by inductively coupled plasma (ICP)-assisted DC magnetron sputtering and under a quite low temperature of 50°C. The sputtering was done in an Ar and O2 gas mixture and a ceramic ZnO target was used. The microstructures of the film were investigated by X-ray diffractometer and scanning electron microscope. It was shown that all of the films had a c-axis preferred orientation perpendicular to the substrate. In our work, film with resistivity of 7 × 108Ω·cm and transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure and 50°C temperature. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0218625X
- Volume :
- 14
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Surface Review & Letters
- Publication Type :
- Academic Journal
- Accession number :
- 28528418
- Full Text :
- https://doi.org/10.1142/S0218625X07010664