Behavior of stress induced leakage current in thin HfOxNy films.

The behavior of stress induced leakage current (SILC) in thin HfOxNy films is investigated. Except for the H dispersive transport process, the electron trapping process is responsible for the SILC generation in HfOxNy dielectric. This trapping process is severely modulated by temperature, thickness, and stress polarity. The recovery of SILC also proves the influence of trapping process to SILC. [ABSTRACT FROM AUTHOR]