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Ultraviolet light-emitting diodes based on group three nitrides.
- Source :
-
Nature Photonics . Feb2008, Vol. 2 Issue 2, p77-84. 8p. 1 Color Photograph, 2 Diagrams, 1 Chart, 2 Graphs. - Publication Year :
- 2008
-
Abstract
- Light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. For devices operating at shorter wavelengths, alloy compositions with a greater aluminium content are required. The material properties of these materials lie on the border between conventional semiconductors and insulators, which adds a degree of complexity to the development of efficient light-emitting devices. A number of technical developments have enabled the fabrication of LEDs based on group three nitrides (III-nitrides) that emit in the UV part of the spectrum, providing useful tools for a wealth of applications in optoelectronic systems. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 17494885
- Volume :
- 2
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Nature Photonics
- Publication Type :
- Academic Journal
- Accession number :
- 28724664
- Full Text :
- https://doi.org/10.1038/nphoton.2007.293