Tracer diffusion of Cu in CVD β-SiC

Abstract: Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-Silicon carbide (β-SiC) have been measured in the temperature range between 623 and 1373K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one–three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC. [Copyright &y& Elsevier]