PLD of X7R for thin film capacitors

Abstract: Thin film capacitors with a thickness of 200nm were prepared on SrTiO3 (100), (110) and (111) single crystal substrates at a temperature of 973K by pulsed laser deposition (PLD) using a KrF excimer laser in an O2–O3 atmosphere with a gas pressure of 1Pa using an X7R sintered target. As a result, perovskite BaTiO3 solid solution films were obtained. In the X7R thin films on (100) and (110) SrTiO3, only diffraction peaks with strong intensities from BaTiO3 (100) and (110), respectively, were observed. X7R films on SrTiO3 (111) were grown epitaxially oriented to the crystal plane direction of the substrate by inserting an initial homoepitaxial SrTiO3 layer with a thickness of 4nm. The X7R/SrTiO3 film capacitors yielded a large volumetric efficiency of 50μF/mm3 and a temperature coefficient of capacitance (TCC) of −1.3% to 1.3% which satisfies the EIA standard specifications for X7R. [Copyright &y& Elsevier]