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LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate.
- Source :
-
Journal of Applied Physics . Feb2008, Vol. 103 Issue 3, p034118. 5p. 2 Diagrams, 10 Graphs. - Publication Year :
- 2008
-
Abstract
- By a careful choice of film deposition conditions, LaAlO3 (LAO) gate dielectric film with equivalent oxide thickness (EOT) of 0.31 nm and gate leakage current density (Jg) of 0.1 A/cm2 (at Vfb+1 V) has been successfully demonstrated. Elimination of interfacial low-k layer at LAO/Si and reduction of defect density in LAO has been realized through both LAO film deposition at high-temperature (700 °C) and subsequent low-temperature (200 °C) annealing. By using thermal desorption spectroscopy technique, we find that our process reduces remnant H2O or OH- species in the LAO film, which are responsible for the degradation of EOT and Jg. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 30066008
- Full Text :
- https://doi.org/10.1063/1.2838470