Temperature Dependent Minority Electron Mobilities in Strained Si...-...Ge... (0.2 ... x ... 0.4) Layers.

MLA

Rieh, Jae-Sung, and Pallab K. Bhattacharya. “Temperature Dependent Minority Electron Mobilities in Strained Si...-...Ge... (0.2 ... x ... 0.4) Layers.” IEEE Transactions on Electron Devices, vol. 47, no. 4, Apr. 2000, p. 883. EBSCOhost, https://doi.org/10.1109/16.831009.

APA

Rieh, J.-S., & Bhattacharya, P. K. (2000). Temperature Dependent Minority Electron Mobilities in Strained Si...-...Ge... (0.2 ... x ... 0.4) Layers. IEEE Transactions on Electron Devices, 47(4), 883. https://doi.org/10.1109/16.831009

Chicago

Rieh, Jae-Sung, and Pallab K. Bhattacharya. 2000. “Temperature Dependent Minority Electron Mobilities in Strained Si...-...Ge... (0.2 ... x ... 0.4) Layers.” IEEE Transactions on Electron Devices 47 (4): 883. doi:10.1109/16.831009.