Cite
Top-gated graphene field-effect-transistors formed by decomposition of SiC.
MLA
Wu, Y. Q., et al. “Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of SiC.” Applied Physics Letters, vol. 92, no. 9, Mar. 2008, p. 092102. EBSCOhost, https://doi.org/10.1063/1.2889959.
APA
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., Cooper, J. A., Shen, T., Pandey, D., Prakash, G., & Reifenberger, R. (2008). Top-gated graphene field-effect-transistors formed by decomposition of SiC. Applied Physics Letters, 92(9), 092102. https://doi.org/10.1063/1.2889959
Chicago
Wu, Y. Q., P. D. Ye, M. A. Capano, Y. Xuan, Y. Sui, M. Qi, J. A. Cooper, et al. 2008. “Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of SiC.” Applied Physics Letters 92 (9): 092102. doi:10.1063/1.2889959.