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N-S transition in nonisothermal characteristics of silicon diodes and thyristors.
- Source :
-
Technical Physics Letters . Feb2008, Vol. 34 Issue 2, p118-121. 4p. 3 Graphs. - Publication Year :
- 2008
-
Abstract
- The results of numerical modeling of the stationary nonisothermal current-voltage ( I-U) characteristics of forward-biased high-voltage diodes and thyristors in the interval of current densities J ∼ 200–500 A/cm2 revealed an N-S transition in the shape of these curves and a hysteresis in the constant current source regimes. It is established that the mechanism of these phenomena is related to a temperature-induced decrease in the coefficient of ambipolar diffusion under the conditions of enhanced recombination. Devices with such I-U characteristics can be irreversibly switched by short current pulses from stable states on the working branch to the states with high heat evolution, which leads to a risk of thermal breakdown. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON diodes
*THYRISTORS
*DIODES
*ELECTRIC current rectifiers
*PHYSICS
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 34
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 31518107
- Full Text :
- https://doi.org/10.1134/S1063785008020090