DETERMINACION DE CONCENTRACION DE PORTADORES Y ALTURA DE LA BARRERA SCHOTTKY EN PELICULAS SEMICONDUCTORAS DEL SISTEMA GaInAsSb.

Electrical caracterization was made using mesurements of Hall effect and isoterms curves I-V in layers of cuaternary system GaInAsSb grown by liquid phase epitaxy (LPE) thecnique on single GaSb:Te (100) substrate. The sign and carrier density were determined at room temperature. It was found samples are n-type and the calculated volume densities show strongly doped films. The curves I-V in a range from 75K to 300K, with silver contacs, they present Schottky barrier benhavior, with heights of the barriers around 0.4 eV at room temperature and decrese when the temperature lows. The ideality factors take values heigther than 1 when the temperature decrese. [ABSTRACT FROM AUTHOR]