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The effect of a smart body tie on the bottom-gate thin film transistor
- Source :
-
Solid-State Electronics . May2008, Vol. 52 Issue 5, p808-812. 5p. - Publication Year :
- 2008
-
Abstract
- Abstract: This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect. [Copyright &y& Elsevier]
- Subjects :
- *THIN film transistors
*THIN film devices
*TRANSISTORS
*ELECTRONICS
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 52
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 31560693
- Full Text :
- https://doi.org/10.1016/j.sse.2007.11.009