System-in-package integration of passives using 3D through-silicon vias.

The article offers analyses on few technology options in 3D passive integration, as well as the in through-silicon via (TSV) technology. Si-integrated trench capacitors was created through a passive integration in order to composed a triple metal"insulator"metal (MIM) layer stacks. As a result, the use of TSB technology shows a very fine and high aspect of ratio, which can be wet-etched thru a conventional reactive ion etching (RIE).