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Strain-Induced Relaxor Behavior in PbSc0.50Nb0.25Ta0.25O3 Thin Films: A Comparison with Nanoceramics.

Authors :
Correa, Margarita
Kumar, Ashok
Katiyar, Ram S.
Source :
Journal of the American Ceramic Society. Jun2008, Vol. 91 Issue 6, p1788-1795. 8p. 2 Black and White Photographs, 5 Graphs.
Publication Year :
2008

Abstract

Comparative studies of the microstructure, micro-Raman spectroscopy, and dielectric properties of PbSc0.50Nb0.25Ta0.25O3 (PSNT) thin films and nanoceramics were carried out over a wide range of temperature (100–520 K) and frequency (100 Hz to 1 MHz). The microstructure of PSNT films revealed an in-plane compressive strain, whereas PSNT nanoceramics showed an average grain size of 10–15 nm although these nanoordered regions are not capable of producing relaxor behavior. We have observed a shift of 65 K in the dielectric maxima temperature in PSNT films toward the lower temperature side compared with bulk, which confirms the in-plane compressive strain in the films. We have proposed a dielectric model to calculate the shift in dielectric maxima temperature. Using our experimental data of PSNT thin films, the theoretical model predicted a shift of 62 K in the dielectric maxima temperature, which matched well with our experimental observation. The modified Curie–Wiess law showed a broad relaxation (γ∼2) and a higher disorder level (δ=90 K) for PSNT thin films compared with PSNT nanoceramics having γ∼1.60 and δ=15 K. Well-behaved hysteresis loops were observed in a broad temperature range for PSNT thin films and slim hysteresis for nanoceramics, indicating a relaxor ferroelectric and diffused ferroelectric phase transition (DFPT) nature, respectively. The temperature-dependent micro-Raman spectroscopy revealed that the ferroelectric state in PSNT nanoceramics was accompanied by the appearance of a new peak as a shoulder at ∼80 cm−1 to the lowest F2g mode ∼57 cm−1. Its half-widths and intensity reduced to zero near the phase transition temperature, whereas the A1g mode showed a doublet namely at (805 and 830 cm−1) below DFPT and an intermediate singlet frequency at 820 cm−1 above DFPT. The micro-Raman spectra for the thin film matched quite well with the nanoceramics, except that the missing second F2g mode at ∼360 cm−1 was interpreted due to a shorter coherence length in the dipole arrangement in thin films. The in-plane compressive strain, dipole arrangement, and the size of the nanoordered regions vary the dielectric response of the PSNT films compared with the nanoceramics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00027820
Volume :
91
Issue :
6
Database :
Academic Search Index
Journal :
Journal of the American Ceramic Society
Publication Type :
Academic Journal
Accession number :
32470646
Full Text :
https://doi.org/10.1111/j.1551-2916.2008.02406.x