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Luminescence characteristic of YVO4:Eu3+ thin film phosphors by Li doping
- Source :
-
Thin Solid Films . Jun2008, Vol. 516 Issue 16, p5577-5581. 5p. - Publication Year :
- 2008
-
Abstract
- Abstract: YVO4:Eu3+ and Li-doped YVO4:Eu3+ thin film phosphors have been deposited on Al2O3 (0001) substrate using a pulsed laser deposition technique. The Li+ ions concentration was varied from 0 to 3 wt.% and Li+ doping influenced crystallinity and surface morphology of YVO4:Eu3+ films.. As Li+ content increases from 0 wt.% to 2 wt.%, not only crystallinity was improved, but also the shape of grains was rounded. However, Li+ content, increases further to 3 wt.% the shape of grains was changed to elliptical. The emitted radiation was dominated by a red emission peak at 619 nm radiated from the 5 D 0–7 F 2 transition of Eu3+ ions. In particular, the incorporation of Li+ ions into YVO4 lattice could induce an increase of photoluminescence. The enhanced luminescence results not only from the improved crystallinity but also from the enhanced surface roughness. The luminescent intensity and surface roughness exhibited similar behavior as a function of Li+ ions concentration. [Copyright &y& Elsevier]
- Subjects :
- *LUMINESCENCE
*SURFACES (Technology)
*PHOSPHORS
*DOPED semiconductor superlattices
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 516
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 32471568
- Full Text :
- https://doi.org/10.1016/j.tsf.2007.07.129