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Magnetic and electrical transport properties of Cr3(Se1−x Te x )4 compounds

Authors :
Li, Y.B.
Brück, E.
Tegus, O.
Zhang, Y.Q.
Feng, W.J.
Sun, N.K.
Li, D.
Li, J.
Gortenmulder, T.J.
Huang, Y.K.
Zhang, Z.D.
Source :
Journal of Alloys & Compounds. Aug2008, Vol. 461 Issue 1/2, p21-25. 5p.
Publication Year :
2008

Abstract

Abstract: The magnetic and electrical transport behaviors of Cr3(Se1−x Te x )4 compounds are investigated. A transition from antiferromagnetism to ferromagnetism occurs at x =0.2 in this system and abnormal changes of the lattice parameter a and angle β take place around the magnetic transition point. When Se is partially substituted by Te, a minimum of resistivity (ρ min) is observed in the temperature dependence of resistivity. The temperature T min, where the minimum ρ min is, increases with Te concentration. The minimum in resistivity at T min is ascribed to the competition between a diminishing resistivity due to domain ordering and a rising resistivity due to disordered frozen spins in each domain. The electrical transport behavior below T min is described by hopping conductivity in terms of variable range—hopping. An external magnetic field affects strongly the resistivity of the Cr3(Se1−x Te x )4 compounds, which shifts the magnetic ordering temperature T MO to higher temperature and T min to lower temperature. Subsequently, a negative magnetoresistance is found in this system. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
09258388
Volume :
461
Issue :
1/2
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
32555715
Full Text :
https://doi.org/10.1016/j.jallcom.2007.07.003