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Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Jun2008, Vol. 266 Issue 12/13, p2797-2800. 4p. - Publication Year :
- 2008
-
Abstract
- Abstract: The n-type GaN film was grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD). Mn+ ions of 75keV with the fluence of 8×1017/cm2 were implanted in the GaN at 350°C. The implanted sample was annealed at 850°C to recrystallize the sample and to remove implantation damage. We investigated the structural and magnetic properties of Mn+ ion-implanted GaN by using Rutherford back-scattering (RBS), high resolution transmission electron microscopy (HRTEM) and superconducting quantum interference device (SQUID). RBS results showed the Mn+ ions were concentrated near the surface. HRTEM results showed nano-clusters structure in the sample. The temperature dependence of magnetization taken in zero-field-cooling and field-cooling conditions with the block temperature was 267K and hysteresis loops which exhibited a transformation from ferromagnetism to superparamagnetism showed the features of magnetic nano-clusters system. And it could be explained the magnetic property of this film originated from Mn-rich clusters. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 266
- Issue :
- 12/13
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 32566992
- Full Text :
- https://doi.org/10.1016/j.nimb.2008.03.120