Cite
Passivation effect and photoluminescence decay lifetime of Si nanocrystals produced by hot implantation
MLA
Sias, U. S., et al. “Passivation Effect and Photoluminescence Decay Lifetime of Si Nanocrystals Produced by Hot Implantation.” Nuclear Instruments & Methods in Physics Research Section B, vol. 266, no. 12/13, June 2008, pp. 3125–28. EBSCOhost, https://doi.org/10.1016/j.nimb.2008.03.172.
APA
Sias, U. S., Behar, M., & Moreira, E. C. (2008). Passivation effect and photoluminescence decay lifetime of Si nanocrystals produced by hot implantation. Nuclear Instruments & Methods in Physics Research Section B, 266(12/13), 3125–3128. https://doi.org/10.1016/j.nimb.2008.03.172
Chicago
Sias, U.S., M. Behar, and E.C. Moreira. 2008. “Passivation Effect and Photoluminescence Decay Lifetime of Si Nanocrystals Produced by Hot Implantation.” Nuclear Instruments & Methods in Physics Research Section B 266 (12/13): 3125–28. doi:10.1016/j.nimb.2008.03.172.