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Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures
- Source :
-
Solid-State Electronics . Jul2008, Vol. 52 Issue 7, p1018-1023. 6p. - Publication Year :
- 2008
-
Abstract
- Abstract: The characteristics of InGaP/GaAs heterostructure-emitter bipolar transistors (HEBTs) including conventional GaAs bulk base, InGaAs/GaAs superlattice-base, and InGaAs quantum-well base structures are presented and compared by two-dimensional simulation analysis. Among of the devices, the superlattice-base device exhibits a highest collector current, a highest current gain and a lowest base–emitter turn-on voltage attributed to the increased charge storage of minority carriers in the InGaAs/GaAs superlattice-base region by tunneling behavior. The relatively low turn-on voltage can reduce the operating voltage and collector–emitter offset voltage for low power consumption in circuit applications. However, as to the quantum-well base device, the electrons injecting into the InGaAs well are blocked by the p+-GaAs bulk base and it causes a great quantity of electron storage within the small energy-gap n-type GaAs emitter layer, which significantly increases the base recombination current as well as degrades the collector current and current gain. [Copyright &y& Elsevier]
- Subjects :
- *TRANSISTORS
*MINING engineering
*CATHODE rays
*PARTICLES (Nuclear physics)
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 52
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 32644668
- Full Text :
- https://doi.org/10.1016/j.sse.2008.02.006