Cite
Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation.
MLA
Zhao, J. P., et al. “Amorphous Ge Quantum Dots Embedded in SiO2 Formed by Low Energy Ion Implantation.” Journal of Applied Physics, vol. 103, no. 12, June 2008, p. 124304. EBSCOhost, https://doi.org/10.1063/1.2927254.
APA
Zhao, J. P., Huang, D. X., Chen, Z. Y., Chu, W. K., Makarenkov, B., Jacobson, A. J., Bahrim, B., & Rabalais, J. W. (2008). Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation. Journal of Applied Physics, 103(12), 124304. https://doi.org/10.1063/1.2927254
Chicago
Zhao, J. P., D. X. Huang, Z. Y. Chen, W. K. Chu, B. Makarenkov, A. J. Jacobson, B. Bahrim, and J. W. Rabalais. 2008. “Amorphous Ge Quantum Dots Embedded in SiO2 Formed by Low Energy Ion Implantation.” Journal of Applied Physics 103 (12): 124304. doi:10.1063/1.2927254.