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NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers.
- Source :
-
Nanotechnology . Jul2008, Vol. 19 Issue 26, p65202-65202. 1p. - Publication Year :
- 2008
-
Abstract
- Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as [?]108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRONIC circuits
*ELECTRIC circuits
*DIGITAL electronics
*ELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 19
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 33051817
- Full Text :
- https://doi.org/10.1088/0957-4484/19/26/265202