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Characterization of intrinsic donor defects in ZnO ceramics by dielectric spectroscopy.

Authors :
Pengfei Cheng
Shengtao Li
Le Zhang
Jianying Li
Source :
Applied Physics Letters. 7/7/2008, Vol. 93 Issue 1, p012902. 3p. 4 Graphs.
Publication Year :
2008

Abstract

With the existence of depletion layer, the intrinsic donor defect structure of ZnO ceramics has been investigated by broadband dielectric spectroscopy in a wide temperature range. Two loss peaks originating from electronic relaxation of oxygen vacancy and zinc interstitial, respectively, are observed in ZnO ceramics simultaneously, implying the coexistence of these two intrinsic defects. The corresponding activation energy for electronic relaxation of zinc interstitial and oxygen vacancy are 0.26 and 0.36 eV, respectively, which is consistent with other reports [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
93
Issue :
1
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
33407393
Full Text :
https://doi.org/10.1063/1.2956405