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DC and Transient Performance of 4H-SiC Double-Implant MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Aug2008, Vol. 55 Issue 8, p1824-1829. 6p. - Publication Year :
- 2008
-
Abstract
- SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as RSP,ON = 8.3 mΩ · cm². DC and transient characteristics are shown. Room and elevated temperature (up to 200 °C) 600V/5A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 33941680
- Full Text :
- https://doi.org/10.1109/TED.2008.926592