Back to Search
Start Over
Advanced High-Voltage 4H-SiC Schottky Rectifiers.
- Source :
-
IEEE Transactions on Electron Devices . Aug2008, Vol. 55 Issue 8, p1871-1874. 4p. - Publication Year :
- 2008
-
Abstract
- This paper presents advanced 4H-SiC high-voltage Schottky rectifiers with improved performance when compared to conventional 4H-SiC Schottky rectifiers. Two types of 4H-SiC junction barrier Schottky (JBS) rectifiers have been explored. These rectifiers offer Schottky-like ON-state and fast switching characteristics, while their OFF-state characteristics have a low leakage current similar to that of the PiN junction rectifier. Planar 4H-SiC JBS rectifiers, with more than 1-kV blocking capability and orders of magnitude lower reverse leakage current than that of conventional SiC Schottky rectifiers, have been demonstrated. In addition, a novel device structure, called lateral channel JBS rectifier, was designed and experimentally demonstrated in 4H-SiC with up to 1.5-kV blocking capability and pinlike reverse characteristics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 33941687
- Full Text :
- https://doi.org/10.1109/TED.2008.926642