Back to Search
Start Over
1 .88-mΩ cm2 1650-V Normally on 4H-SiC TI-VJFET.
- Source :
-
IEEE Transactions on Electron Devices . Aug2008, Vol. 55 Issue 8, p1880-1886. 7p. - Publication Year :
- 2008
-
Abstract
- The SiC trenched-and-implanted vertical junction field-effect transistor (TI-VJFET) is an excellent device for power switching applications, but its on-resistance needs to be further reduced to suppress ON-state power loss. In this paper, we used small cell pitch size and high channel/drift layer doping concentration to achieve low on-resistance. Advanced fabrication processes, such as Bosch process trench etching, self-aligned Ni silicide, and self-aligned gate overlay were implemented to support such an aggressive design. Normally on 4H-SiC TI-VJFETs of various channel-opening dimensions have been designed and fabricated based on a 12 μm, 1.8 x 1016 cm3 doped drift layer. Record high performance TI-VJFETs have been achieved and will be reported. Other SiC VJFET structures under active research are reviewed and compared to TI-VJFET. Without the need for epi-regrowth or stringent lithography alignment, TI-VJFET has the advantage of a less demanding fabrication process. In addition, its high current density, adjustable channel width and low gate resistance make TI-VJFET an excellent device for fast power switching applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 33941689
- Full Text :
- https://doi.org/10.1109/TED.2008.926678