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Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films.
- Source :
-
Applied Physics Letters . 8/11/2008, Vol. 93 Issue 6, p062903. 3p. 1 Black and White Photograph, 1 Chart, 3 Graphs. - Publication Year :
- 2008
-
Abstract
- During atomic layer deposition of homogeneous LayZr1-yOx thin films spontaneous segregation of ZrO2 nanocrystals that are embedded in an amorphous La2O3 matrix takes place. This occurs if the Zr content in the LayZr1-yOx film rises above 30%, i.e., if the pulse ratio between the lanthanum precursor and the zirconium precursor is larger than four. X-ray diffraction analysis shows that the ZrO2 nanocrystals are in the tetragonal phase, which is the most stable configuration of this material with the highest dielectric permittivity. These nanocrystal-embedded thin films exhibit higher dielectric constants as the Zr content increases. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 93
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 34000019
- Full Text :
- https://doi.org/10.1063/1.2971032